Introduction The insulated gate bipolar transistor (IGBT) is a power semiconductor used as an electronic switch in high-power and high-frequency electric power applications. This paper presents a preliminary discussion on the related mechanism. The transistor has been exposed to these radiations in the biased condition and the collector characteristics and forward current gain have been measured as a. Keywords: insulated gate bipolar transistor, gamma irradiation, total dose effects, trench gate IGBT (Some gures may appear in colour only in the online journal) 1. Our results from those experiments (unpublished) always. MOS Transistor Noise Model The dominant source of noise in an MOS transistor is thermal noise, since the MOS transistor channel in strong inversion (i.e., when it is ON) is conductive In subthreshold, i.e. The degradation of the current gain of the bipolar transistor caused by the gamma irradiation after the neutron pre-irradiation would be greater than that of the neutron irradiation after the gamma pre-irradiation, and the difference is more obvious in PNP transistor than in NPN transistor. experiments irradiating bipolar transistors with gamma rays in different bias configurations. The experimental results show that when the collector-emitter voltage is constant and the collector current is extremely low, the current gain degradation of the bipolar transistor is relatively large, and the current gain increases with the collector current. We present the dose-rate effect and emitter size effect of DPSA bipolar transistors under gamma ray irradiation.
Such devices were fabricated in a BiCMOS SOI. Under the condition that the collector-emitter voltage is constant, the variation curve of the bipolar transistor current gain with the collector current is measured, and the influence of different irradiation order of neutron/ gamma on the current gain of the bipolar transistor is studied. This work deals with the analysis of -ray effects on NPN and PNP bipolar junction transistors (BJT). On the basis of this model, bipolar transistors and screen-oxide capacitors were irradiated at 60/spl deg/C at 200 rad(SiO/sub 2/)/s in a successful effort to match low-rate damage. In this paper, the effect of nitride passivation layer on the irradiation response of PNP bipolar junction transistors (BJTs) by Co-60 gamma ray under high and low dose rates is investigated. In this paper, CFBR-II fast neutron reactor (China's second fast neutron pulse reactor) and Co-60 device are used to carry out experiments on different sequential neutrons/gamma irradiated bipolar transistors.
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